24th World Nano Conference
Institute for Molecular Science, Japan
Title: Hall effect in bulk-doped organic single crystals
Biography: Masahiro Hiramoto
Controlling "holes" and "electrons" responsible for electric conduction of p-type and n-type semiconductors by doping had been the central technology inorganic single crystal electronics represented by silicon chips and solar cells. We have reported the effects of impurity doping at ppm level in photovoltaic organic semiconductors. The number of carriers created by doping and their mobility can be freely evaluated by "Hall effect measurement" using a magnetic field. However, in the field of organic electronics, no one has ever attempted to dope impurities into an organic single crystal itself nor measure its Hall effect. Recently, we have combined the rubrene organic single crystal growth technique with our original ultra-slow deposition technique of 10-9 nm/s, which includes a rotating shutter having aperture and for the first time, we have succeeded in producing the ppm-level doped organic single crystal and have detected its Hall effect signal. The present results have the meaning of dawn of organic single crystal electronics similar to the silicon single crystal electronics.