16^th World Nano Conference

Biography

Biography: Leonard F Register

Abstract

Particle-based ensemble semi-classical Monte Carlo (SCMC) remains a benchmark in semiconductor device research, because of combination of relative computational efficiency, first-principles transport physics, and the ready ability to model scattering. The latter contributes not just to injection efficiencies, but screening of potential wells, thermalisation of carrier distributions (particularly among energy valleys), and source drain-resistance. However, particle-based ensemble semi-classical Monte Carlo (MC) methods must employ quantum corrections (QCs) to address quantum confinement and degenerate carrier populations to model today's and tomorrow’s ultra-scaled MOSFETs. We describe the most complete treatment of quantum confinement effects and carrier degeneracy in a three-dimensional (3D) MC device simulator to date, and apply them to simulation of n-channel Si and III-V FinFETs. Far-from-equilibrium degenerate statistics (beyond hot Fermi distributions), QC-based modeling of surface-roughness scattering, quantum-confined phonon and impurity scattering are considered, in addition to quantum confinement-induced redistribution of charge carriers in real-space and momentum-space. The use of fractional “subcarriers” also minimizes classical carrier-carrier scattering that is incompatible with degenerate statistics, as well as providing improved statistics. FinFET simulations illustrate the contributions of each of these QCs. We show how collectively these modeled quantum effects can substantially reduce and even eliminate otherwise expected benefits of a considered In0.53Ga 0.47As FinFET over Si but otherwise identical Si FinFET, despite lower bulk electron masses and higher mobilities and thermal velocities in In0.53Ga0.47As, as illustrated in Fig. 1.